Transistor self-heating has become a critical concern in the design and operation of modern electronic devices. This review aims to provide a comprehensive overview of transistor self-heating models, the effects it has on device performance, and the methods employed to prevent or mitigate their adverse impacts. Various self- heating models are discussed, including analytical, numerical, and compact models. Models aim to capture the thermal behavior of the device with reduced complexity, enabling efficient circuit-level simulations. The effects of self-heating on transistor performance are then examined. Transistor self-heating can lead to temperature rise, which affects key device parameters such as threshold voltage, drain current, and transconductance. These effects can result in performance degradation, reduced reliability, and even device failure. Furthermore, the paper addresses the trade-offs associated with these prevention methods, such as area overhead, power overhead, and computational complexity. The integration of these techniques into the transistor is crucial to achieving reliable and efficient operation. This review paper highlights the importance of accurate modeling, understanding the effects of self- heating, and implementing appropriate prevention methods in modern transistor technology.

Keywords: SHE (Self-heating Effect), SOI (Silicon On Insulator), GAA(Gate All Around), NSFET (Nano Sheet Field Effect Transistor), LGBT (Lateral Insulated Gate Bipolar Transistor).