Transient behavior and transmission bit rates analysis of optoelectronic integrated devices laser diode (LD) and light emitting diode (LED) under amplification and ionizing irradiation environments

Abd El-Naser A. Mohamed; Nabil A. Ayad; Ahmed Nabih Zaki Rashed; Hazem M. El-Hageen

doi:10.5897/JEEER.9000034

Journal of
Electrical and Electronics Engineering Research

Abbreviation: J. Electrical Electron. Eng. Res.
Language: English
ISSN: 2141-2367
DOI: 10.5897/JEEER
Start Year: 2009
Published Articles: 59

Full Length Research Paper

Transient behavior and transmission bit rates analysis of optoelectronic integrated devices laser diode (LD) and light emitting diode (LED) under amplification and ionizing irradiation environments

Abd El-Naser A. Mohamed1, Nabil A. Ayad2, Ahmed Nabih Zaki Rashed1* and Hazem M. El-Hageen2

1Electronics and Electrical Communication Engineering Department, Faculty of Electronic Engineering, Menouf, 32951, Egypt. 2Atomic Energy Authority, P. O. Box 29, Naser City, Cairo, Egypt
Email: [email protected]

Article Number - 09D7E849142
Vol.3(7), pp. 121-133 , September 2011
https://doi.org/10.5897/JEEER.9000034

Accepted: 23 August 2011
Published: 30 September 2011

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