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Comparison of low field electron transport characteristics
in Ge and Si semiconductors and effects of neutron energy
deposition on their crystal structure
H. Arabshahi1,2
1Department
of Physics, Payame Nour University of Fariman, Fariman,
Iran.
2Department
of Physics, Ferdowsi University of Mashhad, Mashhad, Iran.
E-mail:
hadi_arabshahi@yahoo.com.
Accepted 21 April, 2011 |
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The transport of minority electrons up to 600 K temperature
in silicon and germanium have been investigated, using an
iterative approach. Theoretical expressions for electron
scattering which take into account the ellipsoidal nature of
the conduction band valleys have been incorporated into the
model. Minority electron mobility calculations compared
favorably with experimental results. The low temperature
value of electron mobilty increases significantly with
increasing doping concentration. The amount of neutron
energy deposition in Si and Ge crystal of different sizes
and at different distances from a neutron source has also
been evaluated by using MCNP code. Then, the rate of atoms
displacement in the crystals has been calculated using NRT
Model. The damage to crystal is proportional to the energy
deposition of neutron directly. Results show that the number
of atoms displacement in the crystal is related to the
neutron radiation damage and increased by enlarging of
crystal size.
Key words: Minority electrons, ionized imurity scattering, neutron
energy, atom displacement. |
